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Microchip Technology 1N6864US — Discrete Semiconductors

1N6864US Microchip Schottky Rectifier, 80 V, 3 A, SQ-MELF

MPN1N6864US
End of Life

Microchip Technology 1N6864US Schottky rectifier, 80 V, 3 A, 700 mV Vf, SQ-MELF B package, fast recovery, surface mount.

$152.2600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1N6864US specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)80 V
Voltage - forward (Vf) (Max) @ if700 mV @ 3 A
Current - reverse leakage @ vr150 µA @ 80 V
Current - average rectified3A
Operating temperature - junction-65°C ~ 125°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
TechnologySchottky
CaseSQ-MELF, B

Product details

80 V 3 A Schottky in a hermetic SQ-MELF

The 1N6864US from Microchip Technology is a Schottky rectifier rated for 80 V reverse voltage and 3 A average forward current, with a maximum forward voltage of 700 mV at 3 A. It is classified as a fast recovery device (≤ 500 ns, > 200 mA Io), which for a Schottky is the standard recovery speed — the Schottky barrier itself switches fast, and this rating confirms it meets the general-purpose fast-recovery spec for circuits that need low reverse recovery charge. The SQ-MELF B package is a hermetic, surface-mount ceramic barrel — it handles the thermal cycle of military and aerospace boards well, and the metalized ends make for a straightforward reflow or hand-solder operation if you have a steady iron and the right tip.

Junction temperature and leakage profile

The junction operates from -65°C to 125°C, covering the full military temperature range — this part is at home in avionics, satellite, or downhole equipment where the ambient swings wide. Reverse leakage is specified at 150 µA at 80 V — typical for a 3 A Schottky at its maximum rated voltage, but expect leakage to climb with junction temperature; keep the thermal path clean if you are running near the 125°C limit.