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1N6661

1N6661 Microchip Technology Standard Recovery Diode, 500mA

MPN1N6661
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Microchip Technology 1N6661 standard recovery diode, MIL-PRF-19500/587 series, 500mA average rectified current, 225V reverse voltage, DO-204AH (DO-35) axial package, through-hole mounting.

$7.0200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1N6661 specifications
ParameterValue
SeriesMilitary, MIL-PRF- 19500/587
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)225 V
Voltage - forward (Vf) (Max) @ if1 V @ 400 mA
Current - reverse leakage @ vr50 nA @ 225 V
Current - average rectified500mA
Operating temperature - junction-65°C~175°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageBulk
CaseDO-204AH, DO-35, Axial

Product details

Key parametrics and what they mean for the BOM

The 1N6661 is a standard recovery diode rated for 500 mA average rectified current (Io) with a 225 V DC reverse voltage maximum. The 1 V forward voltage drop at 400 mA forward current gives a conduction loss of about 0.4 W at that point — well within the DO-35 package's dissipation capability for most board-level designs. Reverse leakage is specified at 50 nA maximum when 225 V is applied across the junction. This low leakage matters in high-impedance bias circuits or where the diode sits across a power rail that must not back-feed into a low-current source.

Military qualification and sourcing posture

The 1N6661 is qualified to MIL-PRF-19500/587, the military standard for semiconductor diodes. This means the part has passed the screening, burn-in, and group A/B/C testing required for high-reliability applications — avionics, ground-support equipment, and defence electronics where lot traceability and failure-rate data are contractually required.