Fast-recovery diode in a hermetic SQ-MELF package
The 1N6642US/TR is a standard fast-recovery diode from Microchip Technology, rated for 75 V reverse voltage and 300 mA average rectified current. The SQ-MELF D package is a hermetic ceramic surface-mount form factor — the D-5D supplier device package. Hermetic construction gives it an advantage over plastic packages in high-reliability, aerospace, or sealed-module environments where moisture resistance and thermal cycling endurance are required.
Parametric limits for the BOM engineer
Junction temperature spans -65°C to 175°C — the full military/industrial temperature range. This covers avionics, downhole, and engine-bay applications without derating the thermal budget. Forward voltage is 1.2 V maximum at 100 mA — the conduction loss at the typical operating point. Reverse leakage is 500 nA maximum at 75 V, low enough for battery-powered or high-impedance circuits where leakage current drains the supply or biases a sensitive node. Junction capacitance is 5 pF at 0 V bias, 1 MHz — the low capacitance supports fast edge rates and keeps the diode from loading the signal path in high-speed switching or RF snubbing circuits.
Active production — sourcing for volume or sample
Supplied in Tape & Reel (TR) packaging, the D-5D SQ-MELF body is compatible with standard pick-and-place equipment. The base product number is 1N6642; the /TR suffix denotes the reel quantity.