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Microchip Technology 1N6641US — Discrete Semiconductors

Microchip 1N6641US Fast Recovery Diode, 50 V, 300 mA

MPN1N6641US
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Microchip Technology 1N6641US fast recovery diode, MIL-PRF-19500/609 series, 50 V, 300 mA, 5 ns trr, SQ-MELF D-5D package, surface mount.

$9.3300Ref. price · indicative, final on quote
Microchip Technology 1N6641US datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1N6641US specifications
ParameterValue
SeriesMilitary, MIL-PRF-19500/609
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)50 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 200 mA
Current - reverse leakage @ vr100 nA @ 50 V
Current - average rectified300mA
Operating temperature - junction-65°C~175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
CaseSQ-MELF, D
Reverse recovery time5 ns

Product details

Fast switching in a hermetic MELF

The 1N6641US is a fast recovery diode rated for 300 mA average rectified current with a 5 ns reverse recovery time, making it suitable for high-frequency rectification and snubbing in circuits where speed matters more than raw current capacity. Qualified to MIL-PRF-19500/609, this standard diode handles 50 V reverse voltage and operates across a -65°C to 175°C junction temperature range, which covers military and aerospace thermal extremes.

Parametric profile for the BOM line

Forward voltage is 1.1 V max at 200 mA forward current — the conduction loss at rated load is under 330 mW, so the SQ-MELF package dissipates it without derating in still air. Reverse leakage is 100 nA max at 50 V reverse bias, which keeps standby power negligible in battery-powered or high-impedance circuits.

Frequently asked questions

What is the reverse recovery time of the 1N6641US?

The 1N6641US has a 5 ns reverse recovery time, which qualifies it as a fast recovery diode per the < 500 ns threshold at > 200 mA.

What military specification covers the 1N6641US?

The 1N6641US is qualified to MIL-PRF-19500/609, the military standard for semiconductor diodes.

What package does the 1N6641US come in?

It comes in a SQ-MELF, D package (supplier device package D-5D), which is a surface-mount hermetic package suited for high-reliability environments.

What is the maximum junction temperature for the 1N6641US?

The junction temperature range is -65°C to 175°C, covering military and aerospace thermal requirements.