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Microchip Technology 1N6631US — Discrete Semiconductors

Microchip 1N6631US Fast Recovery Diode, 1.4A 1100V SQ-MELF

MPN1N6631US
Active

Microchip Technology 1N6631US standard fast recovery diode, 1.4 A average rectified, 1100 V reverse voltage, 60 ns trr, SQ-MELF A package, surface mount.

$18.0750Ref. price · indicative, final on quote
Microchip Technology 1N6631US datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1N6631US specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)1100 V
Voltage - forward (Vf) (Max) @ if1.4 V @ 1.4 A
Current - reverse leakage @ vr4 µA @ 1100 V
Current - average rectified1.4A
Operating temperature - junction-65°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
CaseSQ-MELF, A
Capacitance @ vr,40pF @ 10V, 1MHz
Reverse recovery time60 ns

Product details

Fast recovery rectifier for high-voltage snubbing and freewheeling

The Microchip Technology 1N6631US is a standard fast recovery diode rated for 1.4 A average rectified current (Io) and 1100 V DC reverse voltage (Vr).

Parametric profile and switching performance

Reverse leakage is specified at 4 µA maximum at the full 1100 V blocking voltage, confirming the junction's high-voltage integrity at temperature. Junction capacitance measures 40 pF at 10 V reverse bias and 1 MHz — a low enough figure to keep switching losses modest in high-frequency rectifier and snubber circuits. The 60 ns trr means the diode clears stored charge quickly enough for typical 50-100 kHz SMPS secondary rectification without excessive ringing.

Frequently asked questions

What is the reverse recovery time of 1N6631US?

The 1N6631US has a reverse recovery time (trr) of 60 ns, classifying it as a fast recovery diode (trr ≤ 500 ns at Io > 200 mA). This suits it for switching applications where recovery charge must be minimized.