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Microchip Technology 1N6630/TR — Discrete Semiconductors

Microchip 1N6630/TR Fast Recovery Diode, 990V, 1.4A, Axial

MPN1N6630/TR
Active

Microchip Technology 1N6630/TR fast recovery rectifier diode, 990 V reverse voltage, 1.4 A average forward current, 50 ns trr, standard technology, A Axial package, Tape & Reel.

$10.0900Ref. price · indicative, final on quote
Microchip Technology 1N6630/TR datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1N6630/TR specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)990 V
Voltage - forward (Vf) (Max) @ if1.4 V @ 1.4 A
Current - reverse leakage @ vr2 µA @ 990 V
Current - average rectified1.4A
Operating temperature - junction-65°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR)
TechnologyStandard
CaseA, Axial
Capacitance @ vr,40pF @ 10V, 1MHz
Reverse recovery time50 ns

Product details

Active production — 990 V fast recovery diode

The 1N6630/TR is an active-production fast recovery rectifier from Microchip Technology, rated for 990 V DC reverse voltage and 1.4 A average rectified forward current. Its 50 ns reverse recovery time (trr) qualifies it as a fast recovery diode — below 500 ns — making it suitable for high-frequency rectification and snubber circuits where switching losses matter.

Forward drop and junction temperature limits

Maximum forward voltage is 1.4 V at 1.4 A forward current — the conduction loss at rated load is 1.96 W, which must be dissipated through the axial leads and body.

Frequently asked questions

How can I order 1N6630/TR or check current stock?

The 1N6630/TR is an active-production part. No stock-holding claim is made here.

What is 1N6630/TR's listed speed and reverse recovery time?

The 1N6630/TR is classified as a fast recovery diode (trr ≤ 500 ns at >200 mA Io). Its reverse recovery time is 50 ns, making it suitable for high-frequency rectification and snubber circuits.