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Microchip Technology 1N6628U — Discrete Semiconductors

Microchip 1N6628U Fast Recovery Diode, 660V, 1.75A, SQ-MELF

MPN1N6628U
Active

Microchip Technology 1N6628U Fast Recovery Diode, Standard type, 660V Vr, 1.75A Io, 45ns trr, SQ-MELF B package, Surface Mount, Bulk.

$18.0000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1N6628U specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)660 V
Voltage - forward (Vf) (Max) @ if1.35 V @ 2 A
Current - reverse leakage @ vr2 µA @ 660 V
Current - average rectified1.75A
Operating temperature - junction-65°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
CaseSQ-MELF, B
Capacitance @ vr,40pF @ 10V, 1MHz
Reverse recovery time45 ns

Product details

Active production — what it means for a BOM line

The 1N6628U: For a procurement desk, Active means the manufacturer continues to accept orders and the part is supported in the current BOM revision.

660 V, 1.75 A — the switching rectifier's duty envelope

Rated for 660 V DC reverse voltage and 1.75 A average rectified current, this fast recovery diode handles the primary-side bulk rectification in off-line power supplies and DC-link snubbers where the reverse voltage stress sits above the 400 V bus. The 45 ns reverse recovery time (trr) classifies it as a fast recovery device per the JEDEC definition (trr ≤ 500 ns at Io > 200 mA) — the switching loss at 100 kHz is manageable in a continuous-conduction-mode boost or flyback topology.

SQ-MELF B — surface-mount hermetic footprint

The SQ-MELF B (Surface Mount MELF, B case) is a hermetic glass-passivated package suited for high-reliability and military/aerospace applications where moisture resistance and thermal cycling endurance are required.

Junction temperature and leakage at the high-voltage rail

Reverse leakage at 660 V is only 2 µA at 25°C — it doubles with temperature, so at 125°C junction the leakage contribution to the thermal budget should be checked against the derating curve. Capacitance is 40 pF at 10 V reverse bias and 1 MHz — this is low enough that the diode does not load the switching node significantly in a 100–500 kHz converter, but it contributes to the snubber design in high-voltage ringing circuits.

Frequently asked questions

What is the 1N6628U's reverse recovery time and what does it mean?

The 1N6628U has a 45 ns reverse recovery time (trr), classifying it as a fast recovery diode. This trr is low enough to keep switching losses manageable in 100 kHz+ power converters, making it suitable for flyback, boost, and half-bridge topologies where the diode must turn off quickly after forward conduction.

What package does the 1N6628U come in?

The 1N6628U is supplied in a SQ-MELF B (Surface Mount MELF, B case) package. It is a hermetic glass-passivated surface-mount package, shipped in Bulk form.