Rectifier for high-frequency power stages and snubber networks
The 1N6627US is a 440 V, 1.75 A fast recovery rectifier from Microchip Technology, packaged in a hermetic SQ-MELF (A-MELF) ceramic body. Its 30 ns reverse recovery time (trr) keeps turn-off losses low in switching supplies operating above 100 kHz, while the 440 V reverse voltage gives headroom on a 250 VAC rectified bus with typical mains transients.
Parametric fit for snubber and boost-stage duty
At 1.75 A average rectified current (Io), the diode conducts continuous load current in a forward converter secondary or a PFC boost stage without exceeding the junction temperature at 150°C ambient. Forward voltage is 1.35 V max at 2 A — the conduction loss at 1.75 A sits around 2.4 W, manageable in the SQ-MELF with adequate board copper. Reverse leakage is 2 µA at 440 V, a low figure that prevents thermal runaway in high-impedance snubber paths. The 40 pF junction capacitance at 10 V / 1 MHz means the diode adds minimal capacitive loading to the switching node — relevant when paralleling diodes for higher current or in resonant topologies.