1100 V fast recovery in a hermetic MELF
The 1N6625US/TR is a 1100 V, 1 A fast recovery rectifier from Microchip Technology, housed in a surface-mount SQ-MELF (A-MELF) package. The 60 ns reverse recovery time (trr) makes it suitable for snubbing, flyback clamping, and boost-stage commutation where the voltage rail sits well above the usual 600 V fast-recovery ceiling. The SQ-MELF body is a hermetic ceramic package — the same footprint as the standard MELF but with a square profile for pick-and-place stability.
Recovery speed and forward drop trade-off
At 60 ns trr, this diode recovers faster than a standard recovery rectifier but with a forward voltage of 1.75 V at 1 A — about 0.3 V higher than a 1 kV standard recovery part. The extra Vf is the price of the speed; the trade-off matters in a 1100 V flyback clamp where the recovery losses at 100 kHz would otherwise overheat a slower diode. Reverse leakage is specified at 1 µA at the full 1100 V rating, which is tight for a 1 A device. The 10 pF junction capacitance at 10 V and 1 MHz confirms the small die size that enables the fast recovery — the capacitance is low enough that the diode does not add significant ringing in a snubber network.