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Microchip Technology 1N6625US — Discrete Semiconductors

Microchip 1N6625US Fast Recovery Diode, 1100V, 1A, SQ-MELF

MPN1N6625US
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Microchip Technology 1N6625US fast recovery diode, standard type, 1100 V reverse voltage, 1 A average rectified current, 60 ns reverse recovery time, SQ-MELF A package, surface mount, bulk.

$14.4600Ref. price · indicative, final on quote
Microchip Technology 1N6625US datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1N6625US specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)1100 V
Voltage - forward (Vf) (Max) @ if1.75 V @ 1 A
Current - reverse leakage @ vr1 µA @ 1100 V
Current - average rectified1A
Operating temperature - junction-65°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
CaseSQ-MELF, A
Capacitance @ vr,10pF @ 10V, 1MHz
Reverse recovery time60 ns

Product details

High-voltage fast recovery in a hermetic package

The 1N6625US is a 1100 V, 1 A fast recovery diode from Microchip Technology, housed in a hermetic SQ-MELF (A-MELF) surface-mount package.

Parametric profile for the BOM line

The 1100 V reverse voltage ceiling covers 400 VAC rectified rails with margin for transients. The 10 pF capacitance at 10 V, 1 MHz is low enough that the diode does not load the switching node significantly in high-frequency converters. The fast recovery classification (≤ 500 ns, > 200 mA Io) confirms it is optimized for the 60 ns trr figure rather than general-purpose 50/60 Hz rectification.

Frequently asked questions

What is the reverse recovery time of the 1N6625US?

The 1N6625US has a reverse recovery time (trr) of 60 ns, placing it in the fast recovery category (≤ 500 ns, > 200 mA Io).