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Microchip Technology 1N6625E3 — Discrete Semiconductors

Microchip Technology 1N6625E3

MPN1N6625E3
End of Life
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N6625E3 specifications
ParameterValue
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)1100 V
Voltage - forward (Vf) (Max) @ if1.95 V @ 1.5 A
Current - reverse leakage @ vr1 µA @ 1000 V
Current - average rectified1A
Operating temperature - junction-65°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
CaseA, Axial
Reverse recovery time80 ns