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Microchip Technology 1N6624US — Discrete Semiconductors

Microchip 1N6624US Fast Recovery Diode, 990V, 1A, SQ-MELF

MPN1N6624US
End of Life

Microchip Technology 1N6624US fast recovery rectifier diode, standard type, 990 V DC reverse voltage, 1 A average rectified current, 50 ns reverse recovery time, SQ-MELF A package, surface mount, bulk.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1N6624US specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)990 V
Voltage - forward (Vf) (Max) @ if1.55 V @ 1 A
Current - reverse leakage @ vr500 nA @ 990 V
Current - average rectified1A
Operating temperature - junction-65°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
CaseSQ-MELF, A
Capacitance @ vr,10pF @ 10V, 1MHz
Reverse recovery time50 ns

Product details

The 1N6624US is a Microchip Technology fast recovery rectifier diode rated for 990 V DC reverse voltage and 1 A average rectified current, with a forward voltage of 1.55 V at 1 A. The 500 nA reverse leakage at 990 V is tight for a 1 A diode at this voltage class — it tells you the die has clean passivation and the junction holds off the field without micro-plasma leakage paths.

The SQ-MELF A package (also called A-MELF) is a surface-mount cylindrical body with metallized end caps — it reflows like a standard SMD but the cylindrical shape means the solder fillet wets around the entire end cap, giving a stronger joint than a flat SOD-123 in high-vibration environments. The 10 pF junction capacitance at 10 V is low enough that the diode does not load the switching node with extra charge storage.

Microchip lists the 1N6624US as Active.

Frequently asked questions

What is the reverse recovery time of the 1N6624US?

The 1N6624US has a reverse recovery time (trr) of 50 ns, which qualifies it as a fast recovery diode (≤ 500 ns at > 200 mA).