50 ns reverse recovery — what it costs in switching loss
The 1N6623US/TR is a fast recovery rectifier with a 50 ns reverse recovery time (trr), placing it in the Fast Recovery =< 500ns class. That 50 ns figure is the time the diode takes to sweep stored charge out of the junction when switching from forward conduction to reverse blocking — the shorter this window, the less energy is dissipated as heat in the die and the lower the ringing injected into the switching node. Rated for 880 V DC reverse voltage (Vr) and 1 A average rectified current (Io), this diode fits high-voltage bus rails, snubber networks, and flyback catch diodes where the reverse stress exceeds 600 V. Reverse leakage is just 500 nA at 880 V, confirming the passivation and junction quality hold up near the voltage limit.
SQ-MELF — hermetic SMT for high-reliability boards
The SQ-MELF, A package (supplier device package A-MELF) is a hermetic, surface-mount cylindrical body with metallized end caps. It is the SMT equivalent of a DO-41 axial-lead diode — the same die inside a sealed ceramic barrel that passes fine-leak gross-leak hermeticity tests per MIL-STD-750. No plastic encapsulation means no moisture sensitivity level (MSL) concern; the part ships dry and stores indefinitely without bake-out. The tape-and-reel format (TR suffix) feeds pick-and-place machines directly. The MELF body rolls during placement if the nozzle vacuum is marginal — a shallow nozzle with a flat face or a chamfered inner diameter improves pick reliability. Solder paste volume on the end-cap lands should be generous; the joint fillet wets up the barrel and provides the thermal path for the 1.55 W forward loss.
Active production — no LTB pressure
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