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Microchip Technology 1N6622US/TR — Discrete Semiconductors

Microchip 1N6622US/TR Fast Recovery Diode, 660V 1.2A

MPN1N6622US/TR
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Microchip Technology 1N6622US/TR fast recovery rectifier diode, 660 V reverse voltage, 1.2 A average rectified current, 30 ns trr, SQ-MELF A package, Tape & Reel.

$7.6800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1N6622US/TR specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)660 V
Voltage - forward (Vf) (Max) @ if1.4 V @ 1.2 A
Current - reverse leakage @ vr500 nA @ 660 V
Current - average rectified1.2A
Operating temperature - junction-65°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR)
TechnologyStandard
CaseSQ-MELF, A
Capacitance @ vr,10pF @ 10V, 1MHz
Reverse recovery time30 ns

Product details

Rectifier for high-voltage fast-switching circuits

The 1N6622US/TR is a 660 V, 1.2 A fast recovery rectifier in a hermetic SQ-MELF A package — built for circuits where reverse voltage headroom and switching speed both matter.

660 V DC reverse voltage means it can sit on a 400 VDC bus with margin for transients — the 1.2 A average forward current covers control power supplies and auxiliary rails in that voltage class. Forward drop is 1.4 V at the full 1.2 A rating — at 1.2 A continuous the conduction loss is about 1.7 W, which the SQ-MELF's metal lid sinks to the board if the copper pad is adequate. Reverse leakage is only 500 nA at 660 V at room temperature — the spec is at 25 °C; expect leakage to rise with junction temperature, but the 150 °C max junction gives headroom for hot environments.

Package and deployment context

SQ-MELF A (also called A-MELF) is a hermetic surface-mount package — the ceramic body and metal end caps seal the die from moisture, so it suits high-reliability and military/aerospace boards where plastic packages are not accepted.

Frequently asked questions

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