Microchip Technology 1N6622/TR Fast Recovery Standard Diode, 600 V, 1.2 A, 45 ns trr, Through Hole, A Axial, A-PAK, Tape & Reel.
| Parameter | Value |
|---|---|
| Diode type | Standard |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 600 V |
| Voltage - forward (Vf) (Max) @ if | 1.4 V @ 1.2 A |
| Current - reverse leakage @ vr | 500 nA @ 600 V |
| Current - average rectified | 1.2A |
| Operating temperature - junction | -65°C~150°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tape & Reel (TR) |
| Case | A, Axial |
| Reverse recovery time | 45 ns |
The 1N6622/TR: With a reverse recovery time (trr) of 45 ns, this diode is fast enough for moderate-speed switching in PFC boost stages, flyback snubbers, and output rectification below 100 kHz, without the snap-off characteristic of some ultrafast diodes.
The 1N6622/TR has a reverse recovery time (trr) of 45 ns, classifying it as a fast recovery diode suitable for switching applications below 100 kHz.