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Microchip Technology 1N6621US/TR — Discrete Semiconductors

Microchip 1N6621US/TR Fast Recovery Diode, 2A 400V SQ-MELF

MPN1N6621US/TR
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Microchip Technology 1N6621US/TR standard fast recovery diode, 2A average rectified current, 400V reverse voltage, 45ns trr, SQ-MELF D-5A package, Tape & Reel.

$12.7200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1N6621US/TR specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)400 V
Voltage - forward (Vf) (Max) @ if1.6 V @ 2 A
Current - reverse leakage @ vr500 nA @ 400 V
Current - average rectified2A
Operating temperature - junction-65°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR)
CaseSQ-MELF, A
Capacitance @ vr,10pF @ 10V, 1MHz
Reverse recovery time45 ns

Product details

Fast recovery diode for 400V bulk rail snubbing

The Microchip Technology 1N6621US/TR is a standard fast recovery diode rated for 2A average rectified current (Io) and 400V DC reverse voltage (Vr). Its 45ns reverse recovery time (trr) places it in the Fast Recovery category (≤500ns, >200mA), making it suited for snubbing, freewheeling, and clamp applications where switching losses in the diode dominate over conduction losses.

This sets the conduction loss at 3.2W peak — the SQ-MELF D-5A package must dissipate that through the board copper, not a heatsink. The 500nA reverse leakage at 400V is negligible at 25°C but doubles roughly every 10°C junction rise; at 150°C it climbs into the microamp range and adds to the thermal budget. Junction capacitance is 10pF at 10V, 1MHz. For a 400V rail snubber, the capacitance at the operating reverse voltage will be lower — the C-V curve typical for this class drops to ~2-3pF at 400V. This keeps the switching energy per cycle small enough for 100kHz+ hard-switched topologies.

Frequently asked questions

What is the reverse recovery time of 1N6621US/TR?

The 1N6621US/TR has a reverse recovery time (trr) of 45ns, which classifies it as a Fast Recovery diode per the ≤500ns, >200mA Io spec. This is fast enough for 100-200kHz hard-switched converters but not for ZVS/ZCS resonant stages where sub-20ns devices are preferred.