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Microchip Technology 1N6621US — Discrete Semiconductors

1N6621US Microchip Fast Recovery Diode, 440V, 1.2A, SQ-MELF

MPN1N6621US
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Microchip Technology 1N6621US fast recovery diode, standard type, 440 V reverse voltage, 1.2 A average rectified current, 30 ns reverse recovery time, SQ-MELF (A-MELF) surface-mount package, bulk.

$12.5400Ref. price · indicative, final on quote
Microchip Technology 1N6621US datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1N6621US specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)440 V
Voltage - forward (Vf) (Max) @ if1.4 V @ 1.2 A
Current - reverse leakage @ vr500 nA @ 440 V
Current - average rectified1.2A
Operating temperature - junction-65°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
CaseSQ-MELF, A
Capacitance @ vr,10pF @ 10V, 1MHz
Reverse recovery time30 ns

Product details

Fast recovery diode for high-frequency rectification

The 1N6621US is a 440 V, 1.2 A fast recovery diode in a hermetic SQ-MELF (A-MELF) package from Microchip Technology, suited for high-frequency rectification and snubber circuits where reverse recovery time matters.

Parametric profile for BOM fit

Reverse leakage is just 500 nA at 440 V, which keeps quiescent power near zero in standby circuits and high-impedance bias networks. Junction capacitance is 10 pF at 10 V, 1 MHz — low enough that the diode does not load the switching node in a 1 MHz forward converter.

Frequently asked questions

What is the reverse recovery time of 1N6621US?

The 1N6621US has a reverse recovery time (trr) of 30 ns, classifying it as a fast recovery diode suitable for switching frequencies above 100 kHz.

What package does the 1N6621US come in?

The 1N6621US is supplied in a SQ-MELF (A-MELF) surface-mount package, a hermetic ceramic body with metallized end caps rated for high-reliability applications.