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Microchip Technology 1N6620US — Discrete Semiconductors

Microchip 1N6620US Fast Recovery Diode

MPN1N6620US
Active

Microchip Technology 1N6620US fast recovery rectifier diode, 220 V reverse voltage, 1.2 A average current, 30 ns reverse recovery time, SQ-MELF surface mount package, active production.

$12.5400Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1N6620US specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)220 V
Voltage - forward (Vf) (Max) @ if1.4 V @ 1.2 A
Current - reverse leakage @ vr500 nA @ 220 V
Current - average rectified1.2A
Operating temperature - junction-65°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
CaseSQ-MELF, A
Capacitance @ vr,10pF @ 10V, 1MHz
Reverse recovery time30 ns

Product details

30 ns reverse recovery — switching speed for the fast-recovery class

The 1N6620US is a standard fast-recovery rectifier diode from Microchip Technology, rated for a 30 ns reverse recovery time (trr) at the 1.2 A forward current level. This 30 ns trr places it firmly in the fast-recovery class (< 500 ns per the spec definition), meaning the diode sweeps out stored charge quickly when switching from forward conduction to reverse blocking — the primary parameter that determines switching loss in a rectifier stage. The 220 V DC reverse voltage rating and 1.2 A average rectified current define the continuous operating envelope: a 220 V DC bus or peak repetitive reverse stress is the ceiling, and the 1.2 A average is the thermal limit for the device in free-air or on a heatsink trace. Reverse leakage is specified at 500 nA maximum at 220 V — this is a low-leakage figure that matters for circuits where the diode sits across a high-impedance node and leakage current could bias the load or discharge a hold-up capacitor.

Hermetic SQ-MELF package — hi-rel surface-mount deployment

The 1N6620US is supplied in the SQ-MELF package (Supplier Device Package A-MELF), a hermetic surface-mount ceramic package with metallized end caps. Hermetic construction means the die is sealed against moisture and contaminants — this is the package choice for military, aerospace, and high-reliability applications where a plastic-encapsulated device would risk failure under humidity or outgassing. For a satellite power supply or an avionics DC-DC converter that sees cold soak at -55°C and internal heating to 125°C, this device operates within its rated junction temperature without derating the reverse voltage or forward current below the datasheet limits. Package capacitance is 10 pF at 10 V reverse bias, 1 MHz — the junction capacitance contributes to the switching loss during voltage transitions, and a 10 pF figure is typical for a 1.2 A fast-recovery die in this voltage class.

Active production — sourcing through qualified distribution

For a BOM line that requires this exact hermetic fast-recovery diode, the active status removes the urgency of a lifetime buy or a board-spin for a replacement.

Frequently asked questions

What is the reverse recovery time of the 1N6620US?

The 1N6620US has a reverse recovery time (trr) of 30 ns.

What package does the 1N6620US come in?

The 1N6620US is supplied in the SQ-MELF (Surface Mount Quadruple Metallized End Face) package, also designated as the A-MELF supplier device package. This is a hermetic ceramic surface-mount package with metallized end caps, designed for high-reliability military and aerospace applications.

What is the maximum junction temperature for the 1N6620US?

This covers the full military temperature grade and allows operation in avionics, satellite, and engine-bay environments where the ambient temperature may exceed 125°C.