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1N647-1

Microchip 1N647-1 General Purpose Diode, 400V 400mA DO-35

MPN1N647-1
Active

Microchip Technology 1N647-1 general purpose standard recovery diode, 400 V reverse, 400 mA average rectified current, DO-204AH (DO-35) axial-lead glass package, through-hole mount.

$1.6400Ref. price · indicative, final on quote
PackagingDO-204AH, DO-35, Axial
RoHSRoHS non-compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1N647-1 specifications
ParameterValue
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)400 V
Voltage - forward (Vf) (Max) @ if1 V @ 400 mA
Current - reverse leakage @ vr50 nA @ 400 V
Current - average rectified400mA
Operating temperature - junction-65°C~175°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageBulk
CaseDO-204AH, DO-35, Axial

Product details

400 V, 400 mA — the headroom decision

The 1N647-1 is a general-purpose standard recovery rectifier rated for 400 V reverse voltage and 400 mA average rectified current. The 400 V Vr covers a 240 VAC line (340 V peak) with margin, but not a 400 VAC line (565 V peak). The 400 mA Io is continuous — peak repetitive current is higher but not specified here; for a capacitive-input filter, the surge current at power-on may exceed the rating unless a series resistor limits it. Standard recovery (>500 ns, >200 mA Io) means this diode is not intended for fast switching. At line-frequency rectification (50/60 Hz) the recovery time is irrelevant; in a flyback snubber above a few kHz the stored charge will cause excessive dissipation and junction heating.

Junction temperature and package limits

The junction temperature range is -65°C to 175°C — military temperature grade. The DO-35 glass package is hermetic, so moisture ingress and thermal cycling in avionics or downhole environments are not a concern. At 400 mA forward current and 1 V forward drop, dissipation is 400 mW; in still air the DO-35's thermal resistance (approx 200°C/W junction-to-ambient) means the junction rises 80°C above ambient, leaving 95°C headroom to the 175°C limit. Reverse leakage is 50 nA at 400 V — low enough for high-impedance bias circuits or voltage-dropper applications where leakage current would otherwise shift the operating point. The leakage doubles roughly every 10°C, so at 125°C junction it is about 1.6 µA, still negligible for most circuits.

Frequently asked questions

Where can I buy 1N647-1 and how is it quoted?

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