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Microchip Technology 1N647-1 — Discrete Semiconductors

Microchip Technology 1N647-1

MPN1N647-1
Active

DIODE GEN PURP 400V 400MA DO35

$1.6400Ref. price · indicative, final on quote
PackagingDO-204AH, DO-35, Axial
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

1N647-1 Technical Specifications
ParameterValue
Diode typeStandard
Mounting typeThrough Hole
Voltage - DC reverse (Vr)400 V
Voltage - forward (Vf) (Max) @ if1 V @ 400 mA
Current - reverse leakage @ vr50 nA @ 400 V
Current - average rectified400mA
Operating temperature - junction-65°C~175°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageBulk
CaseDO-204AH, DO-35, Axial