The 1N645-1E3 is a standard recovery silicon diode from Microchip Technology, rated for 225 V DC reverse voltage and 400 mA average rectified current. It is classified as Standard Recovery with a reverse recovery time greater than 500 ns at forward currents above 200 mA. Forward voltage drop is specified at 1 V maximum when conducting 400 mA, and reverse leakage is held to 50 nA at the 225 V reverse voltage rating — a tight leakage spec that matters for high-impedance bias circuits or low-duty-cycle rectification where leakage current can dominate the off-state power budget.
The DO-35 body is approximately 0.166 inches long with 0.020-inch diameter leads — a standard footprint that mates with 0.100-inch pitch through-hole layouts on legacy or high-reliability boards where surface-mount is not preferred. The glass hermetic seal gives this package a junction operating range of -65°C to 175°C, suited for environments with wide thermal swings — avionics, downhole instrumentation, or military power supplies where the epoxy-bodied SMD alternatives would degrade above 150°C.
The base product number 1N645 covers the broader family; the -1E3 suffix denotes the specific screening and packaging variant.