Skip to main content
Microchip Technology 1N6316US — Discrete Semiconductors

1N6316US Zener Diode, 4.7 V, 500 mW, SQ-MELF

MPN1N6316US
Active

Microchip Technology 1N6316US Zener diode, 4.7 V nominal, 500 mW, SQ-MELF B package, surface mount, -65°C~175°C, Active.

$15.9000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1N6316US specifications
ParameterValue
MountingSurface Mount
Voltage - zener (Nom)4.7 V
Voltage - forward (Vf) (Max) @ if1.4 V @ 1 A
Current - reverse leakage @ vr5 µA @ 3.5 V
Power - max500 mW
Operating temperature-65°C~175°C
PackageBulk
CaseSQ-MELF, B
Impedance (Max)1.5 kOhms

Product details

4.7 V regulation in a hermetic SQ-MELF

The 1N6316US is a 4.7 V Zener diode rated for 500 mW continuous power dissipation in the SQ-MELF B package — a hermetic, surface-mount ceramic body that seals the die against moisture and outgassing. The -65°C to 175°C operating range spans military and avionics temperature profiles, so the regulation point holds across the thermal extremes of an engine bay, satellite orbit, or downhole tool.

Parametric guardbands for the BOM

Maximum Zener impedance (Zzt) is 1.5 kOhms at the test current — this sets the dynamic resistance the load sees; a lower impedance means tighter regulation as the bias current varies. Reverse leakage is specified at 5 µA max at 3.5 V reverse voltage, which is the leakage budget for the node the diode protects. Forward voltage is 1.4 V max at 1 A — useful if the diode is also used as a clamping element in the forward direction.

Active lifecycle — sourcing posture

No pin-compatible replacement is needed for this line item.

Frequently asked questions

What package does 1N6316US come in?

The 1N6316US ships in the SQ-MELF B package — a hermetic, surface-mount ceramic barrel. The supplier device package is listed as B, SQ-MELF.