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Microchip Technology 1N6310US — Discrete Semiconductors

1N6310US Zener Diode, 2.7 V, 500 mW, SQ-MELF

MPN1N6310US
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Microchip Technology 1N6310US Zener diode, SQ-MELF B package, 2.7 V nominal, ±5% tolerance, 500 mW power dissipation, surface mount, -65°C to 175°C.

$21.2901Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1N6310US specifications
ParameterValue
MountingSurface Mount
Voltage - zener (Nom)2.7 V
Voltage - forward (Vf) (Max) @ if1.4 V @ 1 A
Current - reverse leakage @ vr60 µA @ 1 V
Power - max500 mW
Operating temperature-65°C ~ 175°C
PackageBulk
Tolerance±5%
CaseSQ-MELF, B
Impedance (Max)30 Ohms

Product details

The 1N6310US comes in a SQ-MELF, B package — a surface-mount glass-passivated form factor with end-cap metallization, suited for automated pick-and-place assembly on standard reflow profiles. The B suffix indicates a specific body size within the MELF family; the solderable end caps demand a uniform solder paste deposit and adequate pad geometry to avoid tombstoning during reflow.

Key ratings and what they mean for the BOM

With a nominal zener voltage of 2.7 V and a ±5% tolerance, this diode holds the regulation point within 135 mV of the target — tight enough to bias a low-voltage rail or clamp a signal line. The 500 mW power dissipation ceiling means it can handle up to roughly 185 mA of zener current before junction temperature becomes the limit; the 30-ohm impedance at the zener knee means the regulation stiffens as current increases, a common characteristic in low-voltage references.

Temperature grade and environment

Rated for continuous operation from -65°C to 175°C, the 1N6310US covers the full military temperature range. The upper limit suits high-reliability applications such as avionics, downhole instrumentation, or engine-bay electronics where ambient temperatures exceed the commercial 85°C ceiling. The SQ-MELF's glass-passivated junction is inherently moisture-resistant, though the part does not carry an explicit IP rating.

Reverse leakage and forward characteristics

Reverse leakage is specified at 60 µA maximum when 1 V is applied across the junction — a key parameter for battery-powered circuits where the leakage current directly impacts standby drain.