Fast recovery rectifier, 150 V, 2 A, 30 ns trr
The Microchip Technology 1N6081US is a fast recovery rectifier diode rated for 150 V reverse voltage and 2 A average forward current, with a reverse recovery time of 30 ns. This places it in the class of fast-recovery diodes suitable for switching power supplies and freewheeling circuits where the recovery tail must be short to limit switching losses. Packaged in a surface-mount SQ-MELF (G) case (supplier device package G-MELF D-5C), the 1N6081US is designed for automated assembly on boards where through-hole is not an option. The MELF barrel footprint is common in high-reliability and military-grade designs, offering good thermal conduction through the end caps.
Parametric profile and junction temperature
Reverse leakage is specified at 10 µA maximum at 150 V, a figure that rises with temperature but stays within the typical guard band for a 150 V part. Forward voltage is listed as 1.5 V maximum at 37.7 A — a high-current test point that confirms the die's surge capability rather than the continuous rating. For the 2 A average duty, the forward drop will be significantly lower, typically under 1 V.