30 ns trr fast recovery in a hermetic SQ-MELF
The Microchip 1N6077US is a fast recovery standard diode rated for 6 A average rectified current with a 100 V reverse voltage ceiling.
Hermetic D-5B package and military temperature range
Housed in a SQ-MELF (D-5B supplier device package), the 1N6077US is a hermetic surface-mount diode. The ceramic-metal construction resists moisture ingress and thermal cycling — a fit for avionics, satellite, downhole, and other sealed-environment applications where plastic-packaged diodes risk popcorn cracking or corrosion. The junction operating range spans -65°C to 155°C, covering the full military temperature grade. At the cold end, the reverse recovery time shortens slightly; at 155°C junction, the reverse leakage current rises but remains within the 5 µA spec at 100 V reverse bias.
Forward voltage and surge current handling
Forward voltage is specified at 1.76 V maximum when forward current reaches 18.8 A — this is a surge-level condition, not the continuous 6 A rating. At the 6 A average rectified current, the forward drop will be lower; the 1.76 V figure tells you the diode can handle short-duration overloads without exceeding the junction temperature limit.