Skip to main content
Microchip Technology 1N6076US — Discrete Semiconductors

Microchip 1N6076US Fast Recovery Diode, 6A, 50V, D-5B

MPN1N6076US
Active

Microchip Technology 1N6076US Fast Recovery Diode, Standard type, 6 A average rectified, 50 V reverse, 30 ns trr, SQ-MELF D-5B surface mount, Bulk.

$22.5000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1N6076US specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)50 V
Voltage - forward (Vf) (Max) @ if1.76 V @ 18.8 A
Current - reverse leakage @ vr5 µA @ 50 V
Current - average rectified6A
Operating temperature - junction-65°C~155°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
CaseSQ-MELF, E
Reverse recovery time30 ns

Product details

Fast recovery switching — 30 ns trr at 6 A

The 1N6076US is a standard fast-recovery rectifier with a reverse recovery time of 30 ns, classifying it as Fast Recovery (≤ 500 ns, > 200 mA Io). That 30 ns trr is the time the diode takes to sweep stored charge out of the junction and block reverse voltage — in a 100 kHz boost converter, the recovery losses scale with trr and the switching frequency, so a 30 ns diode keeps the switching node clean and the heatsink smaller than a slower 200 ns part would. Rated for 6 A average rectified current (Io) with a 50 V DC reverse voltage maximum (Vr). The forward voltage drop is specified at 1.76 V typical when driving 18.8 A forward current — that is a pulsed or surge condition, not the continuous average. For continuous 6 A operation, the Vf will be lower; the 1.76 V figure at 18.8 A tells you the die can handle short-duration overloads without exceeding the junction temperature limit. Reverse leakage is 5 µA at 50 V reverse bias, junction temperature range from -65°C to 155°C. The leakage doubles roughly every 10°C above 25°C, so at 125°C junction the leakage could approach 80 µA — still negligible for most power circuits, but worth budgeting in a high-impedance bias supply where leakage current competes with the load current.

SQ-MELF D-5B — hermetic surface-mount package

Housed in a SQ-MELF, E case (supplier device package D-5B), a hermetic ceramic surface-mount package with metallized end caps. The SQ-MELF (Surface Mount Qualified MELF) is a cylindrical body with flat sides — it self-centers during reflow and offers better thermal cycling reliability than a standard MELF because the flat sides reduce rolling during solder paste deposition. The D-5B variant is the Microchip specific marking for this outline. Surface mount mounting — the end caps are soldered directly to the PCB pads. The package is rated for the full -65°C to 155°C junction temperature range, so it suits high-reliability and military-temperature applications where a plastic SMD package would delaminate under thermal shock. No exposed metal tab; heat is conducted through the end-cap solder joints and the PCB copper.

Frequently asked questions

What is the reverse recovery time (trr) of the 1N6076US?

The 1N6076US has a reverse recovery time of 30 ns, classifying it as a Fast Recovery diode (≤ 500 ns, > 200 mA Io). This 30 ns trr is the time to sweep stored charge and block reverse voltage, making it suitable for switching frequencies up to several hundred kHz.

What package does the 1N6076US come in?

It is supplied in a SQ-MELF, E case (Microchip supplier device package D-5B), a hermetic ceramic surface-mount package. The package is rated for the full -65°C to 155°C junction temperature range.