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Microchip Technology 1N6074 — Discrete Semiconductors

1N6074 Fast Recovery Diode, 30 ns, 850 mA, 100 V, Axial

MPN1N6074
Active

Microchip Technology 1N6074, Standard Fast Recovery Diode, 100 V, 850 mA, 30 ns trr, Through Hole, Axial, Bulk.

$14.9850Ref. price · indicative, final on quote
Microchip Technology 1N6074 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1N6074 specifications
ParameterValue
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if2.04 V @ 9.4 A
Current - reverse leakage @ vr1 µA @ 100 V
Current - average rectified850mA
Operating temperature - junction-65°C~155°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
CaseA, Axial
Reverse recovery time30 ns

Product details

Fast recovery diode for 850 mA rectification

The 1N6074 is a standard fast recovery diode from Microchip Technology, rated for 850 mA average rectified current with a reverse recovery time of 30 ns — fast enough to cut switching losses in a 100 kHz boost or flyback stage where a standard 1N400x would ring. The 100 V reverse voltage rating with 1 µA leakage at rated VR suits low-voltage DC rails (12 V, 24 V, 48 V) with margin for transients in industrial control or auxiliary supply circuits.

Parametric limits at junction temperature

Forward voltage is 2.04 V maximum at 9.4 A pulsed current — the conduction loss at that peak is 19.2 W, but the average power dissipation stays within the 850 mA continuous rating when duty cycle is factored in. The 30 ns reverse recovery time is specified as a Fast Recovery type (≤ 500 ns, > 200 mA Io) — the actual trr is well inside the class boundary, which matters for a snubber or freewheeling diode where stored charge drives the turn-off spike.

Frequently asked questions

What is the reverse recovery time of the 1N6074?

The 1N6074 has a reverse recovery time (trr) of 30 ns, which places it firmly in the Fast Recovery class (≤ 500 ns, > 200 mA Io). This 30 ns figure is the actual switching speed, not a class boundary.

What is the maximum junction temperature for the 1N6074?

The operating junction temperature range is -65°C to 155°C. The reverse leakage current is specified at 1 µA at 100 V reverse voltage across this range, though leakage will increase at the high end per the normal diode temperature characteristic.