850 mA, 50 V, 30 ns trr — fast recovery in an axial lead
The 1N6073 is a standard fast-recovery rectifier diode rated for 850 mA average rectified current (Io) with a 50 V maximum reverse voltage (Vr). Its 30 ns reverse recovery time (trr) places it squarely in the fast-recovery class (≤ 500 ns, > 200 mA Io), making it a natural fit for high-frequency rectification, snubbing, and freewheeling circuits where switching losses matter. The axial through-hole package (A, Axial) is straightforward to hand-rework — two solder joints, no fine-pitch alignment. Pin 1 orientation is unambiguous: the cathode band is clearly marked on the body. It will survive a hot-air rework cycle without issue; the leaded form also lets you bend and trim to fit tight layouts.
At 25°C, reverse leakage is just 1 µA at 50 V (Vr). Leakage roughly doubles every 10°C, so at 125°C junction you are looking at about 32 µA — still negligible for most circuits, but worth budgeting in high-impedance or low-power designs. Forward voltage (Vf) is specified at 2.04 V max at 9.4 A — a pulsed condition, not continuous. In continuous 850 mA service, expect Vf to be significantly lower. The 30 ns trr is measured at typical switching conditions; the recovery is soft enough that ringing across the diode is minimal with proper snubbing.
Active production — sourcing through distribution
Microchip Technology lists the 1N6073 as Active.