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Microchip Technology 1N6031B/TR — Discrete Semiconductors

Microchip 1N6031B/TR Zener Diode, 200 V, 500 mW, DO-35

MPN1N6031B/TR
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Microchip Technology 1N6031B/TR Zener diode, 200 V nominal, 500 mW, ±5% tolerance, DO-204AH (DO-35) axial, Tape & Reel.

$2.8500Ref. price · indicative, final on quote
Microchip Technology 1N6031B/TR datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1N6031B/TR specifications
ParameterValue
MountingThrough Hole
Voltage - zener (Nom)200 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 200 mA
Current - reverse leakage @ vr100 nA @ 152 V
Power - max500 mW
Operating temperature-65°C~175°C
PackageTape & Reel (TR)
Tolerance±5%
CaseDO-204AH, DO-35, Axial
Impedance (Max)2 kOhms

Product details

200 V Zener with wide temperature range

The 1N6031B/TR is a 200 V Zener diode in the standard DO-35 axial package, rated for 500 mW continuous power dissipation. The ±5% tolerance on the nominal voltage means the actual Zener breakdown sits between 190 V and 210 V — tight enough for most voltage-reference and clamping circuits in industrial and telecom gear.

Reverse leakage and forward drop

Reverse leakage is specified at 100 nA maximum when biased at 152 V — 76% of the nominal Zener voltage. That low leakage keeps the diode from loading high-impedance bias nodes in standby or fault-sensing circuits. Maximum forward voltage is 1.1 V at 200 mA forward current, typical for a silicon Zener of this voltage class. The 2 kOhms maximum Zener impedance (Zzt) means the regulation slope is moderate; expect about 2 V of voltage shift per 1 mA of current change near the test point.

Frequently asked questions

What is the reverse leakage specification for 1N6031B/TR?

Maximum reverse leakage is 100 nA at a reverse voltage of 152 V. This low leakage makes the diode suitable for high-impedance bias or voltage-sensing applications.