110 V Zener, 500 mW — DO-35 axial
The 1N6025B is a 110 V Zener diode from Microchip Technology in a DO-35 axial-lead package, rated for 500 mW continuous power dissipation. The ±5% tolerance on the nominal voltage means the actual Zener breakdown sits between 104.5 V and 115.5 V — tight enough for most shunt regulation and voltage reference applications in low-power DC rails.
Parametric fit — impedance, leakage, forward drop
Maximum Zener impedance (Zzt) is 650 Ohms at the test current — this sets the dynamic resistance the regulator sees; a lower impedance gives tighter regulation across load steps. Reverse leakage is specified at 100 nA maximum with 84 V applied across the junction, well below the Zener threshold, so the diode draws negligible current in the off state. Forward voltage is 1.1 V maximum at 200 mA forward current, typical for a silicon junction of this die size. The DO-35 glass body handles the full temperature range without package stress; the 500 mW power limit must be derated above 25°C ambient per the standard thermal derating curve for axial-leaded glass diodes.