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1N6011A

Microchip 1N6011A Zener Diode, 30 V, 500 mW, DO-35

MPN1N6011A
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Microchip Technology 1N6011A Zener diode, 30 V, 500 mW, ±10% tolerance, DO-35 axial, through hole, bulk.

$1.9200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1N6011A specifications
ParameterValue
MountingThrough Hole
Voltage - zener (Nom)30 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 200 mA
Current - reverse leakage @ vr100 nA @ 18 V
Power - max500 mW
Operating temperature-65°C~175°C
PackageBulk
Tolerance±10%
CaseDO-204AH, DO-35, Axial
Impedance (Max)95 Ohms

Product details

30 V Zener, 500 mW — voltage reference or clamp

The 1N6011A is a 30 V Zener diode rated for 500 mW continuous power dissipation in a DO-35 axial package. Maximum impedance (Zzt) is 95 Ohms, which sets the dynamic resistance at the Zener knee. For a load drawing 5 mA, the regulation error from impedance is under 0.5 V; at higher currents the error scales linearly and may push the output outside the tolerance band.

Temperature range and leakage

Operating junction temperature spans -65°C to 175°C — a military-grade range that covers avionics, downhole, and engine-bay environments without derating the power dissipation below 500 mW at the hot end. Reverse leakage is 100 nA maximum at 18 V reverse bias — low enough to avoid loading a high-impedance node in a precision reference or sample-and-hold circuit. The forward drop is 1.1 V at 200 mA, typical for a silicon Zener; useful if the diode is also used as a low-current rectifier or protection clamp.