16 V regulation, 500 mW dissipation, DO-35 axial
The 1N6005B/TR is a 16 V zener diode from Microchip Technology in a DO-35 axial package, rated at 500 mW continuous power dissipation. The ±5% tolerance on the nominal voltage means the regulation point stays between 15.2 V and 16.8 V across the operating range — tight enough for most bias and clamp circuits in industrial and telecom supplies. Maximum impedance (Zzt) is 36 Ohms, which sets the load-regulation slope: at 10 mA the voltage drop across the internal resistance adds about 0.36 V to the nominal. Reverse leakage is specified at 100 nA max with 12 V across the junction — a low-leakage floor that matters in high-impedance divider networks where the diode's own draw must not shift the bias point. The operating temperature range of -65°C to 175°C covers military and downhole temperature extremes — the die's silicon junction can survive the thermal cycling of an engine bay or a cold-soak satellite payload without parametric drift.
Through-hole DO-35 (DO-204AH) body with axial leads — the same footprint as a 1N4148 signal diode. The lead spacing is 0.200-inch nominal; the body diameter is about 0.080 inch. The Tape & Reel packaging (TR suffix) indicates the reel quantity for pick-and-place of axial components, though the part itself is hand-inserted or wave-soldered in production. Forward voltage is 1.1 V max at 200 mA — a standard silicon junction drop, not a Schottky. The 500 mW rating derates linearly above 50°C ambient; at 125°C the allowable dissipation drops to about 250 mW.