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Microchip Technology 1N6000C-1E3 — Discrete Semiconductors

1N6000C-1E3 Zener Diode, 10 V, 500 mW, DO-35, Microchip

MPN1N6000C-1E3
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Microchip Technology 1N6000C-1E3 Zener diode, 10 V nominal, 500 mW, ±2% tolerance, DO-204AH (DO-35) axial package, Bulk.

$3.7600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1N6000C-1E3 specifications
ParameterValue
MountingThrough Hole
Voltage - zener (Nom)10 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 200 mA
Current - reverse leakage @ vr100 nA @ 8 V
Power - max500 mW
Operating temperature-65°C ~ 175°C (TJ)
PackageBulk
Tolerance±2%
CaseDO-204AH, DO-35, Axial
Impedance (Max)15 Ohms

Product details

The 1N6000C-1E3 is supplied in a DO-204AH (DO-35) axial-leaded glass package, through-hole mount, shipped in Bulk. The DO-35 body diameter is roughly 1.8 mm, and the lead spacing suits standard 0.100-inch pitch prototype boards or point-to-point wiring.

Zener regulation and leakage

Nominal zener voltage is 10 V with a ±2% tolerance, so the regulation window is 9.8 V to 10.2 V. Maximum power dissipation is 500 mW, which at 10 V limits continuous current to about 50 mA before derating — derate above 25 °C per the standard thermal resistance of the DO-35 body. Reverse leakage is specified at 100 nA maximum at 8 V reverse voltage, which is 80 % of the nominal zener voltage — this gives margin for low-power bias circuits where standby current matters.

Forward characteristics and sourcing

Maximum forward voltage is 1.1 V at 200 mA forward current, so the diode can also serve as a low-current rectifier or clamping element in the forward direction. The impedance Zzt at the zener test current is 15 Ohms maximum, which sets the dynamic regulation — a 1 mA change in current shifts the zener voltage by about 15 mV.