3 A, 40 V Schottky — military-grade screening
The 1N5822/TR is a 3 A average rectified Schottky diode with a 40 V maximum reverse voltage, housed in an axial B package. The forward drop is 500 mV maximum at 3 A, typical for a 40 V Schottky — this sets the conduction loss floor in a power supply or OR-ing circuit. Built to the MIL-PRF-19500/620 specification, this diode is screened to military reliability standards — the junction temperature range of -65 to 125 °C covers avionics, satellite, and downhole environments where commercial parts would not survive.
Switching speed and reverse leakage
Listed as fast recovery (≤ 500 ns, > 200 mA Io), the Schottky barrier inherently switches faster than a pn-junction rectifier — no stored charge to sweep out, so the recovery time is dominated by the junction capacitance and the external circuit. For a 60 Hz line rectifier the speed is irrelevant; for a 100 kHz DC-DC converter it keeps switching losses low. Reverse leakage is 100 µA at 40 V — a figure that rises sharply with junction temperature. At 125 °C the leakage can dominate the thermal budget, so the heatsinking and derating need to account for the hot leakage, not just the 25 °C number.