Active Schottky rectifier for 3 A, 20 V rail
The Microchip Technology 1N5820US is a Schottky diode rated for 3 A average rectified current and 20 V reverse voltage. Classified as a Fast Recovery diode (recovery time ≤ 500 ns at > 200 mA), it is suited for switching power supplies and freewheeling circuits where the Schottky barrier's low forward voltage and fast switching reduce power loss compared to a standard PN-junction rectifier.
SQ-MELF package and thermal envelope
Packaged in a SQ-MELF (B case) surface-mount form factor, the 1N5820US sits on the board with its cathode tab as the primary heat path. Reverse leakage current is specified at 100 µA maximum at the 20 V reverse voltage. This leakage doubles with junction temperature, so the thermal budget at high ambient or high duty cycle should account for the increase.