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Microchip Technology 1N5819UR-1/TR — Discrete Semiconductors

Microchip 1N5819UR-1/TR Schottky Diode, 45 V, 1 A, DO-213AB

MPN1N5819UR-1/TR
Active

Microchip Technology 1N5819UR-1/TR Schottky diode, 45 V reverse, 1 A forward, 490 mV Vf, DO-213AB MELF, tape and reel.

$8.5350Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1N5819UR-1/TR specifications
ParameterValue
Diode typeSchottky
MountingSurface Mount
Voltage - DC reverse (Vr)45 V
Voltage - forward (Vf) (Max) @ if490 mV @ 1 A
Current - reverse leakage @ vr50 µA @ 45 V
Current - average rectified1A
Operating temperature - junction-65°C~125°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR)
CaseDO-213AB, MELF (Glass)
Capacitance @ vr,70pF @ 5V, 1MHz

Product details

Package and board integration — DO-213AB MELF footprint

The 1N5819UR-1/TR ships in the DO-213AB MELF (Metal Electrode Leadless Face) package, also designated LL41. This is a glass-passivated, hermetic barrel — the glass body seals the junction against moisture and ionic contamination, which matters for conformal-coated assemblies in humid or vacuum environments. The MELF footprint is cylindrical; the solder-paste stencil must be designed with a reduced aperture (typically 80% of the pad width) to prevent the component from rolling during reflow. The tape-and-reel format supports automated pick-and-place at standard feeder pitches.

Forward drop and switching speed — the Schottky advantage

This lower conduction loss improves efficiency in low-voltage rails (3.3 V, 5 V) where every 100 mV of diode drop eats into the output margin. The Schottky barrier is a majority-carrier device with no stored charge, so reverse recovery is inherently fast. The datasheet confirms recovery ≤ 500 ns at forward currents above 200 mA, making this diode suitable for switching frequencies above 100 kHz in flyback and boost converters.

Temperature grade and reverse leakage — derating for high-ambient designs

The junction operating range spans -65°C to 125°C, which qualifies the part for military/aerospace temperature cycling. At the cold end the forward drop increases slightly; at the hot end the reverse leakage dominates the thermal budget. Reverse leakage is specified at 50 µA maximum when the device blocks 45 V at 25°C. Schottky leakage doubles approximately every 10°C rise in junction temperature, so at 100°C ambient the leakage current can approach several milliamps. Designers should derate the reverse voltage or add a heatsink pad when the diode operates near its thermal limit.

Junction capacitance — signal-path loading

With 70 pF typical capacitance at 5 V reverse bias and 1 MHz, the 1N5819UR-1/TR loads a high-frequency signal line less than a standard 1 A Schottky in a larger package. This makes it usable as a clamping diode on data lines up to a few MHz, though the capacitance still exceeds what a dedicated TVS or RF Schottky would offer.

Microchip Technology lists the 1N5819UR-1/TR as Active. The part is in current manufacture and available through authorized distribution channels.

Frequently asked questions

What package does 1N5819UR-1/TR use and what are the board-level considerations?

The device is housed in a DO-213AB MELF (LL41) glass-passivated barrel. The cylindrical body requires a reduced solder-paste stencil aperture to prevent tombstoning during reflow. The tape-and-reel format supports standard pick-and-place assembly.