1N5809US - Microchip Technology
MPN1N5809US
End of Life
DIODE GEN PURP 100V 3A B SQ-MELF
$8.2Ref. price · indicative, final on quote
PackagingSQ-MELF, B
RoHSRoHS non-compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Diode type | Standard |
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 100 V |
| Voltage - forward (Vf) (Max) @ if | 875 mV @ 4 A |
| Current - reverse leakage @ vr | 5 µA @ 100 V |
| Current - average rectified | 3A |
| Operating temperature - junction | -65°C ~ 175°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Bulk |
| Case | SQ-MELF, B |
| Capacitance @ vr, | 60pF @ 10V, 1MHz |
| Reverse recovery time | 30 ns |