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Microchip Technology 1N5807

Microchip Technology 1N5807

MPN1N5807
End of Life

DIODE GEN PURP 50V 3A AXIAL

$6.9Ref. price · indicative, final on quote
PackagingB, Axial
RoHSRoHS non-compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N5807 specifications
ParameterValue
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)50 V
Voltage - forward (Vf) (Max) @ if875 mV @ 4 A
Current - reverse leakage @ vr5 µA @ 50 V
Current - average rectified3A
Operating temperature - junction-65°C ~ 175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
CaseB, Axial
Capacitance @ vr,60pF @ 10V, 1MHz
Reverse recovery time30 ns