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Microchip Technology 1N5806E3

Microchip Technology 1N5806E3

MPN1N5806E3
End of Life

DIODE GEN PURP 150V 1A A AXIAL

$5.62Ref. price · indicative, final on quote
PackagingAxial
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N5806E3 specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)150 V
Voltage - forward (Vf) (Max) @ if875 mV @ 1 A
Current - reverse leakage @ vr1 µA @ 150 V
Current - average rectified1A
Operating temperature - junction-65°C ~ 175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
TechnologyStandard
CaseAxial
Capacitance @ vr,25pF @ 10V, 1MHz
Reverse recovery time25 ns