The 1N5711UR-1 is a Schottky barrier diode in the DO-213AA surface-mount MELF package, rated for 50 V reverse voltage and 33 mA average rectified current. Low junction capacitance of 2 pF at 0 V and 1 MHz makes it suited for RF detector and mixer front-ends where fast recovery and minimal charge storage matter. Forward voltage drops to 1 V maximum at 15 mA, typical for a Schottky — lower than a pn-junction diode, so it wastes less headroom in low-voltage rails.
Military screening and temperature range
Built to MIL-PRF-19500/444, the part is screened for high-reliability defence and aerospace applications — the military series designation means lot acceptance testing and traceability are baked in.
Reverse leakage and switching speed
Reverse leakage is 200 nA maximum at the full 50 V rating — low enough for high-impedance analog inputs and battery-powered hold-up circuits where every nanoamp counts. Classified as a small-signal diode with any switching speed (≤200 mA Io), it handles fast edge rates in clamping and protection networks without the stored-charge tail of a standard recovery diode.