The 1N5711UBCC comes in a 3-SMD, No Lead package (supplier device package UB) — a small outline, no-lead footprint that sits flush on the PCB.
Parametric profile for RF detector and mixer front-ends
This is a Schottky barrier diode with 2pF capacitance at 0V bias, 1MHz — the low junction capacitance makes it suitable for RF detector and mixer circuits where the diode's own capacitance would otherwise load the signal path. The 200 nA reverse leakage at 50V keeps the DC bias current low in high-impedance detector nodes. Forward voltage is 1V maximum at 15mA forward current — the Schottky barrier gives a lower Vf than a PN junction at the same current, reducing the voltage drop in the signal chain. Average rectified current is 33mA, which sets the DC load ceiling for detector or mixer applications. Small Signal =< 200mA (Io), Any Speed classification means the diode is characterised for low-current switching and signal detection, not power rectification. The 50V reverse voltage is the maximum DC blocking — adequate for 5V and 12V RF circuits with margin.
Military qualification and compliance
The 1N5711UBCC is part of the Military, MIL-PRF-19500/444 series — this is the JEDEC-qualified screening and reliability standard for discrete semiconductors in defence and aerospace systems. The qualification covers temperature cycling, burn-in, and lot acceptance testing per the MIL-PRF-19500 specification.