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Microchip Technology 1N5711-1/TR — Discrete Semiconductors

Microchip 1N5711-1/TR Schottky Diode, 70V 33mA, DO-35

MPN1N5711-1/TR
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Microchip Technology 1N5711-1/TR Schottky diode, 70V DC reverse, 33mA average rectified, 2pF capacitance, DO-35 axial, Tape & Reel.

$6.1500Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

1N5711-1/TR specifications
ParameterValue
Diode typeSchottky
MountingThrough Hole
Voltage - DC reverse (Vr)70 V
Voltage - forward (Vf) (Max) @ if1 V @ 15 mA
Current - reverse leakage @ vr200 nA @ 50 V
Current - average rectified33mA
Operating temperature - junction-65°C~150°C
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR)
CaseDO-204AH, DO-35, Axial
Capacitance @ vr,2pF @ 0V, 1MHz

Product details

Schottky diode parametrics for detector and switching circuits

The 1N5711-1/TR: This is a Small Signal Schottky diode rated for average rectified current of 33 mA with a maximum DC reverse voltage of 70 V. Forward voltage is specified at 1 V maximum when forward current is 15 mA — the low Vf characteristic typical of Schottky diodes minimizes conduction loss in detector and mixer stages. Reverse leakage is 200 nA maximum at 50 V reverse bias, which is low enough to not load high-impedance front-end circuits in RF detector or sample-and-hold applications. Junction capacitance is 2 pF at 0 V reverse bias measured at 1 MHz — this low capacitance preserves signal integrity in fast-switching and RF detector circuits where capacitive loading would otherwise roll off the bandwidth.

Temperature range and package selection

Packaged in Tape and Reel (TR) for automated insertion equipment, though the axial leads require through-hole placement rather than surface-mount pick-and-place.