Signal-level switching diode for high-speed rectification
The Microchip Technology 1N4448 is a small-signal switching diode rated for 200 mA average rectified current (Io) with a maximum reverse voltage of 75 V. Its 4 ns reverse recovery time (trr) suits it for high-speed switching applications such as logic-level clamping, flyback suppression, and signal rectification in control circuits.
Parametric performance under temperature
Reverse leakage is specified at 25 nA maximum at 20 V reverse bias, confirming a clean junction at room temperature. At the high end, leakage current rises with temperature per the standard silicon diode characteristic, so the 25 nA figure at 25°C may increase by an order of magnitude at 125°C junction.
Through-hole DO-35 package for point-to-point wiring
The glass-sealed body provides hermeticity against moisture ingress, a consideration for long-life industrial or aerospace assemblies.