IXXX200N65B4

IXYS · GenX4™, XPT™ Series

IGBT 650V 370A 1150W PLUS247

IXYS IXXX200N65B4
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Technical specifications

IXXX200N65B4 specifications
Parameter / AttributeSpecification / Value
SeriesGenX4™, XPT™
IGBT typePT
Input typeStandard
MountingThrough Hole
Voltage - collector emitter breakdown650 V
Current - collector (Ic)370 A
Current - collector pulsed1000 A
Power - max1150 W
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Gate charge553 nC
CaseTO-247-3 Variant
Test condition400V, 100A, 1Ohm, 15V
Switching energy4.4mJ (on), 2.2mJ (off)
Td (on/off) @ 25°C62ns/245ns
Vce(on) (Max) @ vge, ic1.7V @ 15V, 160A
IXXX200N65B4
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