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IXYS IXTY08N50D2

IXYS IXTY08N50D2

MPNIXTY08N50D2
Active

MOSFET N-CH 500V 800MA TO252

$2.87Ref. price · indicative, final on quote
PackagingTO-252-3, DPAK (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesDepletion
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTY08N50D2 specifications
ParameterValue
SeriesDepletion
FET typeN-Channel
MountingSurface Mount
Drain to source voltage500 V
Current - continuous drain (Id) @ 25°C800mA (Tc)
Power dissipation60W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureDepletion Mode
CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Rds on (Max) @ id, vgs4.6Ohm @ 400mA, 0V
Gate charge (Qg) (Max) @ vgs12.7 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds312 pF @ 25 V