IXTR170P10P

IXYS · PolarP™ Series

MOSFET P-CH 100V 108A ISOPLUS247

IXYS IXTR170P10P
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Technical specifications

IXTR170P10P specifications
Parameter / AttributeSpecification / Value
SeriesPolarP™
FET typeP-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C108A (Tc)
Power dissipation312W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs13mOhm @ 85A, 10V
Gate charge (Qg) (Max) @ vgs240 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds12600 pF @ 25 V
IXTR170P10P
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