IXTQ50N25T
IXYS · Trench Series
MOSFET N-CH 250V 50A TO3P
[IN STOCK] In Stock: 221 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | Trench |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 250 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 50A (Tc) |
| Power dissipation | 400W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-3P-3, SC-65-3 |
| Vgs(th) (Max) @ id | 5V @ 1mA |
| Rds on (Max) @ id, vgs | 60mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 78 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4000 pF @ 25 V |
IXTQ50N25T
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