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IXYS IXTP6N50D2

IXYS IXTP6N50D2

MPNIXTP6N50D2
Active

MOSFET N-CH 500V 6A TO220AB

$7.66Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesDepletion
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTP6N50D2 specifications
ParameterValue
SeriesDepletion
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureDepletion Mode
CaseTO-220-3
Rds on (Max) @ id, vgs500mOhm @ 3A, 0V
Gate charge (Qg) (Max) @ vgs96 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds2800 pF @ 25 V