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IXYS IXTP36N30P

IXYS IXTP36N30P

MPNIXTP36N30P
Active

MOSFET N-CH 300V 36A TO220AB

$4.97Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesPolarHT™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IXTP36N30P specifications
ParameterValue
SeriesPolarHT™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage300 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C36A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5.5V @ 250µA
Rds on (Max) @ id, vgs110mOhm @ 18A, 10V
Gate charge (Qg) (Max) @ vgs70 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2250 pF @ 25 V