IXTP10P50P

IXYS · PolarP™ Series

MOSFET P-CH 500V 10A TO220AB

IXYS IXTP10P50P
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Technical specifications

IXTP10P50P specifications
Parameter / AttributeSpecification / Value
SeriesPolarP™
FET typeP-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1Ohm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs50 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2840 pF @ 25 V
IXTP10P50P
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