IXTK120N25P

IXYS · Polar Series

MOSFET N-CH 250V 120A TO264

IXYS IXTK120N25P
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Technical specifications

IXTK120N25P specifications
Parameter / AttributeSpecification / Value
SeriesPolar
FET typeN-Channel
MountingThrough Hole
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation700W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-264-3, TO-264AA
Vgs(th) (Max) @ id5V @ 500µA
Rds on (Max) @ id, vgs24mOhm @ 60A, 10V
Gate charge (Qg) (Max) @ vgs185 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8000 pF @ 25 V
IXTK120N25P
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